BUK9614-55A,118

BUK9614-55A,118 datasheet

Маркировка

BUK9614-55A,118
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9614-55A,118 Configuration: Single Continuous Drain Current: 73 A Current - Continuous Drain (id) @ 25?° C: 73A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 10 V ID_COMPONENTS: 1950571 Input Capacitance (ciss) @ Vds: 3307pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 149W Power Dissipation: 149000 mW Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 0.013 Ohms Fall Time: 125 ns Rise Time: 152 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 166 ns Part # Aliases: /T3 BUK9614-55A Other Names: 934055649118, BUK9614-55A /T3
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14 шт.
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